Jbs.ml-dondu.c.koi L/^
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4445
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEo= 800V(Min)
• High Switching Speed
• Wide Area of Safe Operation
APPLICATIONS
• Designed for switching regulator and general purpose
applications.
PIN 1 BASE
2. COLLECTOR
3. EMITTER
TO-3PML package
^
,- B-
Q* m
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base voltage
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tslg
Storage Temperature Range
800
V
7
V
3
A
6
A
1.5
A
60
W
150
'C
-55-150
"C
•-R
mm
DIM WIN MAX
A 19.90 20.10
B 15.90 16,10
C 5.50 5.70
D 0.90 1.10
F 3.30 3,50
G 2.90 3.10
B 5,90 6.10
J 0.595 0.605
K 22.30 22.50
L 1.90 2.10
N 10,80 11.00
Q 4.90 6,10
R 3.75 3.95
S 3.20 i 3.40
L) 9.90 10.10
Y 4JQ 4,90
Z 1JO 2.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and packagedimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Seini-Conductors assumes no responsibility tor any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
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