2SC4445 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC4445 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4445
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc=10mA; IB=0
800
V
VcE(sat) Collector-Emitter Saturation Voltage lc=0.7A; IB=0.14A
0.5
V
VeE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
lc=0.7A; IB=0.14A
VCB= 800V; IE= 0
1.2
V
100 u A
IEBO
Emitter Cutoff Current
VEB= TV; I0= 0
100 u A
hFE
DC Current Gain
lc= 0.7A; VCE= 4V
fr
Current-Gain—Bandwidth Product
IE=-0.3A; VCE=12V
10
30
15
MHz
COB
Output Capadtance
IE= 0; VCB= 10V; ftest= 1.0MHz
50
pF
Switching Times
'on
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 0.7A, IB1 = 0.1A; IB2= -0.35A;
RL= 357n ; VCc= 250V
0.7 u s
4.0 y s
0.7 u s
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