STP60NF06FP(2007) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP60NF06FP
(Rev.:2007)

N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II™ Power MOSFET

STMicroelectronics 

STP60NF06FP

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM (1)

PTOT

dv/dt (2)

Drain-source voltage (VGS = 0)

Gate- source voltage

Drain current (continuos) at TC = 25°C

Drain current (continuos) at TC = 100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1s; Tc= 25°C)

Tstg Storage temperature

Tj

Max. operating junction temperature

1. Pulse width limited by safe operating area

2. ISD ≤60A, di/dt ≤400 A/µs, VDD ≤24V, Tj ≤Tjmax

Table 2. Thermal data

Symbol

Parameter

Rthj-case

Rthj-a

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Maximum lead temperature for soldering purpose

Table 3. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAS

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS (starting Tj=25°C, Id=Ias, Vdd=30V)

Electrical ratings

Value

60

±20

30

21

120

30

0.2

4

2500

– 55 to 175

Unit

V

V

A

A

A

W

W/°C

V/ns

V

°C

Value

5

62.5

300

Value

30

370

Unit

°C/W

°C/W

°C

Unit

A

mJ

3/12

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