STP60NF06FP(2007) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP60NF06FP
(Rev.:2007)

N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STP60NF06FP

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS Breakdown voltage

Zero gate voltage

IDSS Drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250 µA, VGS = 0

60

V

VDS = Max rating

VDS=Max rating, TC=125°C

1 µA

10 µA

VGS = ±20V

±100 nA

VDS = VGS, ID = 250µA

2

4

V

VGS = 10V, ID = 30A

0.014 0.016 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 15V, ID=30A

VDS = 25V, f = 1 MHz,

VGS = 0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 48V, ID = 60A,

VGS = 10V

(see Figure 12)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

50

S

1810

pF

360

pF

125

pF

49 66 nC

18

nC

14

nC

Table 6. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off-delay time

Fall time

Test conditions

VDD = 30V, ID = 30A

RG = 4.7Ω VGS = 10V

(see Figure 13)

VDD = 30V, ID = 30A,

RG = 4.7Ω, VGS =10V

(see Figure 13)

Min. Typ. Max. Unit

16

ns

108

ns

ns

43

ns

20

4/12

Share Link: