2SC3285 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC3285 Datasheet PDF : 2 Pages
| |||
lJ l
, Una.
»J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2SC3285
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
VcEo<susr 800V(Min)
• High Speed Switching
• Good Linearity of hFe
APPLICATIONS
• Designed for power switching applications
11
]
I*1
•
.,
PIN 1.BASE
*2
. COLLECTOR
3. EMITTER
TO-3PN package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
.i'~"
''
- \ J
VCBO Collector-Base Voltage
VCES Collector-Emitter Voltage
VcEO Collector-Emitter Voltage
1000
V
1000
V
800
V
4f Ht .......
f
K
1
•*• -«
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
I CM Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
@ T0=25'C
PC
Collector Power Dissipation
@ Ta=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
7
V
3
A
6
A
2
A
70
W
2.5
150
"C
-55-150 'C
mm
DIM MIN MAX
A 19.90 20.10
B 15.38 15.42
r 4.75 4.85
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.98 3.02
H 3.20 3.40
J 0.595 0.605
K 19.95 20.25
L 1.98 2.02
N 10.83 10.91
0 4.95 5.05
R 3.35 3,45
$ 1.995 2.005
U 5,90 6.10
V 9,90 10,10
NJ SemM'oiitliictors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Seini-C'onduclors is believed to be both acctirnto and reliable ;it the lime ol'uoiim
lo press. I lm\e\er. NJ Semi-Conductors assumes no responsibility lor nnv errors or omissions discovered in its u>e.
N I Semi-( 'diidiielors eiieuuriiiies eiislomers lo verily that dataMieeK are eunvnt bel'oiv plnein^; oi'ders.
Qualify 5emi-Conducfors
Share Link: 