2SC3285 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC3285 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Vceo(sus) Collector-Emitter Sustaining Voltage lc= 0.5A; L= 50mH
VcE(sat) Collector-Emitter Saturation Voltage lc= 2A; IB= 0.4A
VsE(sat) Base-Emitter Saturation Voltage
lc= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 1000V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; lc= 0
hFE
DC Current Gain
lc= 2A; VCE= 5V
fj
Current-Gain—Bandwidth Product
lc=0.2A; VCE=5V;f=1IVIHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 2A, IB1= 0.4A; IB2= -0.8A,
Vcc 250V
2SC3285
MIN TYP. MAX UNIT
800
V
1.5
V
1.5
V
50
uA
50
uA
6
4
MHz
1.0 u s
2.5
ns
0.5 u s
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