2N6371 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N6371

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Excellent Safe Operating Area

·DC Current Gain-

: hFE=15-60(Min)@IC = 8A

·Low Saturation Voltage-

: VCE(sat)= 1.5V(Max)@ IC = 8A

APPLICATIONS

·Series and shunt regulators

·High-fidelity amplifiers

·Power-switching circuits

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

50

V

VCER

Collector-Emitter Voltage RBE= 100Ω

45

V

VCEV

Collector-Emitter Voltage VBE= -1.5V

50

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IB

Base Current-Continuous

7

A

PC

Collector Power Dissipation @TC=25℃ 117

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

1.5 ℃/W

SPTECH website：www.superic-tech.com

2N6371

1

Share Link: