2N6371 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N6371

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= 100Ω

VCEV(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; VBE= -1.5V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 4A

VBE(on) Base-Emitter On Voltage

IC= 16A; VCE= 4V

ICEO

Collector Cutoff Current

VCE= 25V; IB= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 8A; VCE= 4V

hFE-2

Is/b

DC Current Gain

Second Breakdown Collector

Current with Base Forward Biased

IC= 16A ; VCE= 4V

VCE= 40V,t= 1.0s,Nonrepetitive

2N6371

MIN MAX UNIT

40

V

45

V

50

V

1.5

V

4.0

V

4.0

V

1.5 mA

10

mA

15

60

4

2.9

A

SPTECH website：www.superic-tech.com

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