2N3447 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N3447

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Excellent Safe Operating Area

·DC Current Gain-hFE= 40-120@ IC= 5A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max)@ IC = 5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 60V(Min)

APPLICATIONS

·Designed for switching and amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

7.5

A

IB

Base Current-Continuous

4

A

PC

Collector Power Dissipation@TC=25℃ 115

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

2N3447

SPTECH website：www.superic-tech.com

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