2N3447 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2N3447 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base -Emitter Saturation Voltage
IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 5V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 40V; IB= 0
VCE= 60V; VBE= -1V
VCE= 60V; VBE= -1V; TC= 150℃
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 0.1MHz
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 5A; IB1= -IB2= 0.5A;
VCC= 25V; RL= 5Ω;
2N3447
MIN MAX UNIT
60
V
80
V
1.5
V
1.5
V
1.4
V
1.0 mA
0.1
1.0
mA
0.25 mA
40
40 120
400 pF
0.35 μs
2.0 μs
0.35 μs
SPTECH website：www.superic-tech.com
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