2N6227 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N6227

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

DESCRIPTION

·Excellent Safe Operating Area

·High DC Current Gain-

: hFE=20-80(Min)@IC= -3A

·Low Saturation Voltage-

: VCE(sat)= -1.0V(Max)@ IC = -4.5A

APPLICATIONS

·Designed for high power amplifier and switching applications

where high voltages are required.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-6

A

ICM

Collector Current-Peak

-9

A

IB

Base Current-Continuous

-3

A

PC

Collector Power Dissipation @TC=25℃ 150

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

1.17 ℃/W

SPTECH website：www.superic-tech.com

2N6227

1

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