2N6227 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2N6227 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4.5A; IB= -0.45A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -4.5A; IB= -0.45A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -2V
ICEO
Collector Cutoff Current
VCE= -60V; IB= 0
ICBO
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= -120V; IE= 0
VCE= -120V; VBE(off)= -1.5V
VCE= -120V; VBE(off)= -1.5V,TC=150℃
VEB= -7.0V; IC= 0
hFE-1
DC Current Gain
IC= -3A; VCE= -2V
hFE-2
DC Current Gain
IC= -6A; VCE= -2V
fT
Current Gain-Bandwidth Product
IC= -1A; VCE= -20V; f= 0.5MHz
2N6227
MIN MAX UNIT
-120
V
-1.0
V
-2.0
V
-2.0
V
-1.5
V
-1.0 mA
-1.0 mA
-1.0
-5.0
mA
-1.0 mA
20
80
5
1.0
MHz
SPTECH website：www.superic-tech.com
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