BYV26C-TR View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BYV26C-TR Datasheet PDF : 2 Pages
| |||
ioaucti, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
APPLICATIONS
• Switched mode power supplies
• High-frequency inverter circuits
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
BYV26E
BYV26E-TR
5000 per 10" tape and reel
BYV26E
BYV26E-TAP
5000 per ammopack
MINIMUM ORDER QUANTITY
25000
25000
PARTS TABLE
PART
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
TYPE DIFFERENTIATION
VR = 200 V; IF(AV) = 1 A
VH = 400 V; IF(AV) = 1 A
VR = 600 V; IF(AV) = 1 A
VR = 800 V; IF(AV) = 1 A
VR = 1000V;IF(AV)=1 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
BYV26A VR = VRRM
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYV26B
BYV26C
BYV26D
VR = VRRM
VR = VRRM
VR = VRRM
BYV26E VR = VRRM
Peak forward surge current
tp = 10 ms, half sine wave
IFSM
Average forward current
IF(AV)
Non repetitive reverse avalanche energy
I(BR)R = 1 A, inductive load
ER
Junction and storage temperature range
Tj = Ts,g
VALUE
200
400
600
800
1000
30
1
10
-'55to + 175
UNIT
V
V
V
V
V
A
A
mJ
°C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Junction ambient
1 = 10 mm, TL = constant
RthJA
VALUE
45
Quality Semi-Conductors
UNIT
K/W
Share Link: 