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BYV26C-TR View Datasheet(PDF) - New Jersey Semiconductor

Part Name
Description
Manufacturer
BYV26C-TR
NJSEMI
New Jersey Semiconductor 
BYV26C-TR Datasheet PDF : 2 Pages
1 2
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
IF = 1 A
|F= 1 A, TJ = 175 °C
VF
-
VF
-
Reverse current
VR = VRRM
VR = VRRM, T, = 150°C
IR
-
IR
-
BYV26A
V(BR)R
300
BW26B
V(BR)R
500
Reverse breakdown voltage
I R = 100 UA
BYV26C V(BR)R
700
BYV26D V(BR)R
900
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25A
BYV26E
BYV26A
BYV26B
BYV26C
BYV26D
BW26E
V(BR)R
trr
trr
trr
trr
trr
1100
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
2.5
1.3
5
100
-
-
-
-
30
30
30
75
75
UNIT
V
V
uA
uA
V
V
V
V
V
ns
ns
ns
ns
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
-^ 500
Q_
tu
£
0
959728
40
80
120
160
200
TJ - Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
1
v
IhJA = 45 KAN
X 0.8
.
\
0.4
N X
.0.2
s\ R,j A = 1 0 0 f,/wX
0
959730
40
BO
120
^160
200
TamB - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1UUU
VR = RRM
i. 100
o
^^
J
-*^
/
J>
^y.
ztu
I1
cc
^* ^^
0.1
0
9597?9
40
80
120
160 2C
T'i - Junction Temperature (°C)
Fig. 2 - Max. Reverse Current vs. Junction Temperature
10
t = 25 °C -
0.1
0.001
0
1
2
3
4
5
6
7
959731
Vf. - Forward Voltage (V)
Fig. 4 - Max. Reverse Current vs. Junction Temperature

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