SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Voltage-
:VCER= 75V(Min) ;RBE=150Ω
·Collector Current-
:IC=3A
APPLICATIONS
·27MHz RF Power Amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCER
Collector-Emitter Voltage RBE=150Ω
75
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=50℃
TJ
Junction Temperature
5
A
1.2
W
10
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2078
SPTECH website:www.superic-tech.com
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