2SC2078 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2SC2078

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC=0.1mA; IB= 0

V(BR)CER Collector-Emitter Breakdown Voltage IC=1mA; RBE=150Ω

V(BR)EBO Emitter-Base Breakdown Voltage

IE=0.1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC=1A; IB= 0.1A

VBE(sat) Base-Emitter Saturation Voltage

IC=1A; IB= 0.1A

ICBO

Collector Cutoff Current

VCB= 40V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE

DC Current Gain

IC= 500mA ; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1MHz

fT

Current-Gain—Bandwidth Product

IC= 500mA; VCE= 10V

PO

Output Power

η

Power Efficiency

VCC= 12V;Pin=0.2W, f=27MHz

2SC2078

MIN TYP. MAX UNIT

80

V

75

V

5

V

0.6

V

1.2

V

10 μA

10 μA

25

200

45

60

pF

100

MHz

4.0

W

60

%

 hFE Classifications

B

C

D

E

25-50 40-80 60-120 100-200

SPTECH website：www.superic-tech.com

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