2SD1236L View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2SD1236L Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 3A
·Large Current Capacity
·Complement to Type 2SB920L
APPLICATIONS
·Designed for relay drivers, high-speed inverters,converters,
and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
90
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
9
A
1.75
W
30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1236L
SPTECH website：www.superic-tech.com
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