2SD1236L View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2SD1236L Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
2SD1236L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
80
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
90
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
0.4
V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
70
280
hFE-2
DC Current Gain
IC= 3A; VCE= 2V
30
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
20
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A; IB1= IB2= 0.2A
RL= 25Ω; PW=20μs; VCC= 50V
0.1
μs
1.2
μs
0.4
μs
hFE-1 Classifications
Q
R
S
70-140 100-200 140-280
SPTECH website：www.superic-tech.com
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