2SC3182N View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC3182N Datasheet PDF : 2 Pages
| |||
du.ckoi ^Products., (Jn<i.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC3182N
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(satr 2.0V(Max.) @lc= 7A
• Good Linearity of hFE
• Complement to Type 2SA1265N
APPLICATIONS
• Power amplifier applications
• Recommend for 70W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
10
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25"C
Tj
Junction Temperature
1
A
100
W
150
'C
Tstg
Storage Temperature Range
-55-150
'C
11
1
1
.-i
£.
v
O
^ PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-3PN package
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E
li *i
K
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mm
DIM WIN MAX
A 19.90 20,10
B 15.50 15.70
f 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3,60
e 2.90 3.10
h 3.20 3.40
j 0.595 0.605
K 20.50 20.70
L 1.90 2,10
N 10.89 10,91
Q 4.90 5,10
R 3.35 3.45
S 1.995 2.005
U 5.90 6.10
Y 9.90 10,10
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\ithout
imikv. Information Furnished by N.I Semi-Conductors is helie\ed to he hoili accurate and reliable at the time ol going
lo press. I lo\\e\er. N.I Semi-Conductors assumes no responsibility lor an> errors or omissions discovered in its use.'
N.I Semi-Conductors encmira.ues customers lo verily thai datasheets are eimvnt beltiiv plncinj; orders.
Quality -Semi-Conductors
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