2SC3182N View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC3182N Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC3182N
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 50mA; IB= 0
140
V
VcE(sat)
Collector-Emitter Saturation Voltage
lc= 7A; IB= 0.7A
VBE(on)
Base-Emitter On Voltage
lc= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB=140V;IE=0
2.0
V
1.5
V
5
uA
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
5
nA
hpE-1
DC Current Gain
hpE-2
DC Current Gain
COB
Output Capacitance
lc= 1A; VCE= 5V
55
160
lc= 5A; VCE= 5V
35
lE=0;VCB=10V;f,est=1.0MHz
220
PF
fr
Current-Gain—Bandwidth Product
lc=1A;VCE=5V
30
MHz
hpE-1 Classifications
R
O
55-110
80-160
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