2SC4585 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC4585 Datasheet PDF : 2 Pages
| |||
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
usA
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
2SC4585
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= SOOV(Min)
• Fast Switching speed
APPLICATIONS
• Designed for power switching applications.
IHI 1
PIN 1 BASE
11
2. COLLECTOR
1I
3. EMITTER
1
TO-3PML package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1200
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
Total Power Dissipation
PT
@ TC=25"C
Tj
Junction Temperature
8
A
85
W
150
'C
Tstg
Storage Temperature Range
-55-150 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
P>th j-c Thermal Resistance.Junction to Case 1.47 'CM/
1.
t -^ C *-
•r"r
:. t >
< ,' \
_,*
' •}. ': • '
A
" • v - - - I(
H
1 .... •,/-Y"~":
<;
K^
* i ~L
•f* *•
T
-•""-J
.-»— D
-*• R•*- ~- N -*•
mm
DIM MIN MAX
A 19.90 20.10
B 15.90 16.10
C 5.50 5.70
D 0.90 1.10
F 3.30 3.50
G 2.90 3.10
H 5.90 6,10
J 0.595 0.606
K 22.30 22.50
L 1JO 2.10
N 10.80 11.00
0 4.90 5.10
R 3,76 3.95
S 3.20 3.40
U 9.90 10.10
V 4.70 4.90
z 1.95 2.10
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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