2SC4585 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC4585 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 5A; IB= 1A
VeE(sat) Base-Emitter Saturation Voltage
lc= 5A; IB= 1A
ICBO
Collector Cutoff Current
At rated Voltage
ICEO
Collector Cutoff Current
At rated Voltage
IEBO
Emitter Cutoff Current
At rated Voltage
hpE-1
DC Current Gain
lc= 5A; VCE= 5V
llFE-2
DC Current Gain
lc= 1mA; VCE= 5V
fi
Current-Gain—Bandwidth Product lc=1A;VCE=10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
|C=5A, IB1= 1A; IB2=-2A;
RL=50fi;VBB2=4V
2SC4585
MIN TYP. MAX UNIT
800
V
1.0
V
1.5
V
100
nA
100
uA
100
uA
8
7
8
MHz
0.5
us
3.5
us
0.3
us
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