2SC3272 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC3272 Datasheet PDF : 2 Pages
| |||
, (Inc..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC3272
DESCRIPTION
• High Collector-Emitter Breakdown Vojtage-
: V(BR)cEo= 300V(Min)
• Good Linearity of hFe
• Low Saturation Voltage
APPLICATIONS
• Designed for use in color W chroma output and video
signal amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
Collector Power Dissipation
@ TC=25"C
PC
Collector Power Dissipation
@ Ta=25t"
Tj
Junction Temperature
0.1
A
5
W
1.2
150
°c
Tstg
Storage Temperature Range
-55-150
'C
B
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DIM WIN MAX
A 10,70 10.90
B 7.70 7.90
r 2.60 2-80
D 0.66 0.86
F 3.10 3.30
G 4.43 4.63
H 2,00 2.20
J 1.35 1.55
K 16.10 16.30
0 3.70 3.90
R 0.40 0.60
U 1.17 1.37
N.I Semi-Conductors reserves the right to change test conditions, parameter limits anil package dimensions without
notice. Information fumi.shed hy N.I Scmi-Conductors is helieved to he holh aecuruto and reliable at the time ofyoi
10 press. I hu\e\er. N.I Scini-Condiiclors assumes no rosponsihilih lor an\s or omissions discovered in its use
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