2SC3272 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC3272 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC3272
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
lc= 50 u A; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 100nA;lB=0
V(BR)EBO Emitter-Base Breakdown Vltage
lE=50uA;lc=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 50mA; IB= 5mA
ICBO
Collector Cutoff Current
VOB= 200V; IE 0
IEBO
Emitter Cutoff Current
VEB= 4V; lc 0
hFE
DC Current Gain
lc= 10mA; VCE= 10V
fi
Current-Gain—Bandwidth Product
lE=-10mA; VCE=30V
COB
Output Capacitance
IE= 0; VCB= 30V, ftest= 1 MHz
MIN TYP. MAX UNIT
300
V
300
V
5
V
2.0
V
0.5 u A
0.5 n A
39
180
50
MHz
3
PF
Classifications
M
N
P
39-82 56-120 82-180
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