STPS16L45CFP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS16L45CFP Datasheet PDF : 5 Pages
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STPS16L45CT/CFP
THERMAL RESISTANCES
Symbol
Rth(j-c) Junction to case
Parameter
TO-220AB
TO-220FPAB
Per diode
Total
Coupling
Per diode
Total
Coupling
Value
2.2
1.3
0.3
4.5
3.5
2.5
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
IR * Reverse leakage
current
Tj = 25°C
Tj = 125°C
VR = VRRM
VF * Forward voltage drop Tj = 25°C
IF = 8 A
Tj = 125°C
IF = 8 A
Tj = 25°C
IF = 16 A
Tj = 125°C
IF = 16 A
Min.
Typ.
65
0.39
0.55
Max.
0.2
130
0.5
0.45
0.63
0.64
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.26 x IF(AV) + 0.024 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average current versus
temperature (δ = 0.5) (per diode).
Unit
°C/W
Unit
mA
mA
V
ambient
PF(av)(W)
6.0
5.5
5.0
δ = 0.05
4.5
4.0
δ = 0.1
δ = 0.2
δ = 0.5
IF(av)(A)
9
8
7
6
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
TO-220AB
TO-220FPAB
3.5
δ=1
5
3.0
4
2.5
2.0
1.5
3
T
T
2
1.0
1
Tamb(°C)
0.5
IF(av) (A)
δ=tp/T
tp
0.0
0 1 2 3 4 5 6 7 8 9 10
δ=tp/T
tp
0
0
25
50
75
100 125 150
Fig. 3: Normalized avalanche power derating
versus pulse duration.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
2/5
tp(µs)
1
10
100
1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
0
Tj(°C)
25
50
75
100
125
150
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