STPS16L45CFP View Datasheet(PDF) - STMicroelectronics
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Description
Manufacturer
STPS16L45CFP Datasheet PDF : 5 Pages
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Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode, TO-220AB).
STPS16L45CT/CFP
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode, TO-220FPAB).
IM(A)
120
100
80
60
40
IM
20
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=50°C
Tc=100°C
1E+0
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220AB).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
0.2
δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-3
Single pulse
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
IR(mA)
2E+2
1E+2
1E+1
1E+0
Tj=150°C
Tj=125°C
Tj=75°C
1E-1
1E-2
0
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40 45
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
C(pF)
2000
1000
F=1MHz
Tj=25°C
500
200
100
1
2
VR(V)
5
10
20
50
3/5
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