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STM32WB35RGQ7TR View Datasheet(PDF) - STMicroelectronics

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STM32WB35RGQ7TR Datasheet PDF : 193 Pages
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Symbol
Table 41. Current consumption in Sleep and Low-power sleep modes, Flash memory ON
Conditions
TYP
MAX(1)
Parameter
-
Voltage
scaling
fHCLK
Unit
25 °C 55 °C 85 °C 105 °C 25 °C 85 °C 105 °C
IDD(Sleep)
Supply
current in
sleep mode,
fHCLK = fHSI16 up
to 16 MHz
included,
fHCLK = fHSE up to
32 MHz
fHSI16 + PLL ON
above 32 MHz

All peripherals
disabled
Range 2
Range 1
SMPS
Range 1
16 MHz
64 MHz
32 MHz
16 MHz
64 MHz
32 MHz
16 MHz
0.740
2.65
1.40
0.845
2.60
1.90
1.70
0.765
2.70
1.45
0.875
2.60
1.95
1.70
0.865
2.80
1.60
0.990
2.65
2.00
1.75
1.05 0.840 1.210 1.810
3.00 3.00 3.33 3.91
1.80 1.55 1.86 2.49
1.20 0.970 1.40 2.02
2.75
-
-
-
2.10
-
-
-
mA
1.80
-
-
-
IDD(LPSleep)
Supply
current in
low-power
sleep mode
fHCLK = fMSI
All peripherals disabled
2 MHz 0.090 0.125 0.235 0.430 0.130 0.600 1.19
1 MHz 0.058 0.093 0.205 0.400 0.090 0.570 1.16
400 kHz 0.044 0.0725 0.185 0.380 0.070 0.540 1.11
100 kHz 0.0315 0.0635 0.0175 0.370 0.055 0.530 1.13
1. Guaranteed by characterization results, unless otherwise specified.
Table 42. Current consumption in Low-power sleep modes, Flash memory in Power down
Symbol Parameter
Conditions
-
fHCLK
25 °C
TYP
55 °C
85 °C
105 °C
25 °C
MAX(1)
85 °C
105 °C
Unit
Supply fHCLK = fMSI
2 MHz
94.0
115
200
335
135
610
1201
IDD
current in 
1 MHz
56.5
86.0
(LPSleep) low-power All peripherals 400 kHz 40.5
66.5
170
150
305
285
94.2
68.0
560
1171
µA
540
1129
sleep mode disabled
100 kHz 27.5
57.5
140
275
54.6
539
1131
1. Guaranteed by characterization results, unless otherwise specified.

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