STM32WB55CCU7ATR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM32WB55CCU7ATR

Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M4 with FPU, Bluetooth® 5 and 802.15.4 radio solution

STMicroelectronics 

Electrical characteristics

STM32WB55xx STM32WB35xx

Table 58. Low-speed external user clock characteristics(1) – Bypass mode

Symbol

Parameter

Conditions

Min

Typ

Max Unit

VLSEH

VLSEL

OSC32_IN input pin

high level voltage

OSC32_IN input pin

low level voltage

-

0.7 VDDx

-

VDDx

V

-

VSS

-

0.3 VDDx

tw(LSEH) OSC32_IN high or

tw(LSEL) low time

-

250

-

-

ns

Includes initial

ftolLSE

Frequency tolerance

accuracy, stability over

temperature, aging and

-500

-

+500 ppm

frequency pulling

1. Guaranteed by design.

6.3.11

Internal clock source characteristics

The parameters given in Table 59 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 24: General operating

conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 59. HSI16 oscillator characteristics(1)

Symbol

Parameter

Conditions

Min Typ Max Unit

fHSI16

HSI16 Frequency

VDD=3.0 V, TA=30 °C 15.88

-

16.08 MHz

TRIM

HSI16 user trimming step

Trimming code is not a

multiple of 64

0.2

0.3

0.4

Trimming code is a

multiple of 64

-4

-6

-8

DuCy(HSI16)(2) Duty Cycle

-

∆Temp(HSI16)

HSI16 oscillator frequency drift over TA= 0 to 85 °C

temperature

TA= -40 to 125 °C

45

-

55

%

-1

-

1

-2

-

1.5

∆VDD(HSI16)

tsu(HSI16)(2)

tstab(HSI16)(2)

IDD(HSI16)(2)

HSI16 oscillator frequency drift over

VDD

HSI16 oscillator start-up time

VDD=1.62 V to 3.6 V

-

HSI16 oscillator stabilization time

-

HSI16 oscillator power consumption

-

-0.1

-

0.05

-

0.8 1.2

μs

-

3

5

-

155 190 μA

1. Guaranteed by characterization results.

2. Guaranteed by design.

122/193

DS11929 Rev 10

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