Electrical characteristics
STM32WB55xx STM32WB35xx
6.3.13
Flash memory characteristics
Table 65. Flash memory characteristics(1)
Symbol
Parameter
Conditions
Typ
tprog
tprog_row
64-bit programming time
One row (64 double word)
programming time
tprog_page
One page (4 Kbytes)ï€
programming time
tERASE
tME
Page (4 Kbytes) erase time
Mass erase time
IDD
Average consumption from VDD
-
Normal programming
Fast programming
Normal programming
Fast programming
-
-
Write mode
Erase mode
81.7
5.2
3.8
41.8
30.4
22.0
22.1
3.4
3.4
1. Guaranteed by design.
Max Unit
90.8 µs
5.5
4.0
43.0
ms
31.0
24.5
25.0
-
mA
-
Symbol
Table 66. Flash memory endurance and data retention
Parameter
Conditions
Min(1)
NEND Endurance
TA = –40 to +105 °C
10
1 kcycle(2) at TA = 85 °C
30
1 kcycle(2) at TA = 105 °C
15
tRET Data retention
1 kcycle(2) at TA = 125 °C
10 kcycles(2) at TA = 55 °C
7
30
10 kcycles(2) at TA = 85 °C
15
10 kcycles(2) at TA = 105 °C
10
1. Guaranteed by characterization results.
2. Cycling performed over the whole temperature range.
Unit
kcycles
Years
130/193
DS11929 Rev 10