STM32WB55xx STM32WB35xx
Electrical characteristics
6.3
Operating conditions
6.3.1
Summary of main performance
Table 23. Main performance at VDD = 3.3 V
Parameter
Test conditions
Typ
ICORE
Core currentï€
consumption
BLE
IPERI
Peripheral
current
consumption
LP timers
I2C3
LPUART
RTC
VBAT (VBAT = 1.8 V, VDD = 0 V)
Shutdown (VDD = 1.8 V)
Standby (VDD = 1.8 V, 32 Kbytes RAM retention)
Stop2
Sleep (16 MHz)
LP run (2 MHz)
Run (64 MHz)
Radio RX(1)
Radio TX 0 dBm output power(1)
Advertising(2)
(Tx = 0 dBm; Period 1.28 s; 31 bytes, 3 channels)
Advertising(2)
(Tx = 0 dBm, 6 bytes; period 10.24 s, 3 channels)
-
-
-
-
0.002
0.013
0.320
1.85
740
320
5000
4500
5200
13
4
6
7.1
7.7
2.5
1. Power consumption including RF subsystem and digital processing.
2. Power consumption integrated over 100 s, including Cortex-M4, RF subsystem, digital processing and Cortex-M0+.
Unit
µA
6.3.2
General operating conditions
Symbol
Table 24. General operating conditions
Parameter
Conditions
Min
Max
Unit
fHCLK Internal AHB clock frequency
-
0
64
fPCLK1 Internal APB1 clock frequency
-
0
64
MHz
fPCLK2 Internal APB2 clock frequency
-
0
64
VDD Standard operating voltage
-
1.71(1)(2)
3.6
ADC or COMP used
1.62
VDDA Analog supply voltage
VREFBUF used
2.4
ADC, COMP, VREFBUFï€
not used
0
3.6
V
VBAT Backup operating voltage
-
1.55
3.6
DS11929 Rev 10
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