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STM32WB55RGQ6ATR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM32WB55RGQ6ATR Datasheet PDF : 193 Pages
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STM32WB55xx STM32WB35xx
Electrical characteristics
Symbol
Table 25. RF transmitter BLE characteristics (continued)
Parameter
Test conditions
Min Typ Max Unit
Rgfsk
PLLres
On Air data rate
RF channel spacing
-
-
1
2
Mbps
-
-
2
-
MHz
Symbol
Table 26. RF transmitter BLE characteristics (1 Mbps)(1)
Parameter
Test conditions
Min Typ Max Unit
Prf
Pband
BW6dB
IBSE
fd
maxdr
fo
∆f1
Maximum output power
0 dBm output power
SMPS Bypass or 
OVDND(>VF1B.9SM5 PVS)(=2)1.7 V and
SMPS Bypass (VDD > 1.71 V) or
VODND(>VF1B.9SM5 PVS),=C1o.d4eV2a9n(2d)
-
Minimum output power
-
Output power variation over the band Tx = 0 dBm - Typical
6 dB signal bandwidth
In band spurious emission
2 MHz
≥ 3 MHz
Tx = maximum output power
Bluetooth® Low Energy: -20 dBm
Bluetooth® Low Energy: -30 dBm
Frequency drift
Maximum drift rate
Frequency offset
Frequency deviation average
Bluetooth® Low Energy: ±50 kHz
Bluetooth® Low Energy:
±20 kHz / 50 µs
Bluetooth® Low Energy: 
±150 kHz
Bluetooth® Low Energy: 
between 225 and 275 kHz
- 6.0 -
- 3.7 - dBm
-
0
-
- -20 -
-0.5 - 0.4 dB
- 670 - kHz
- -50 -
dBm
- -53 -
-50 - +50 kHz
-20
-
+20
kHz/
50 µs
-150 - +150
kHz
225 - 275
∆fa
OBSE(3)
Frequency deviation
∆f2 (average) / ∆f1 (average)
Out of band
spurious emission
< 1 GHz
≥ 1 GHz
Bluetooth® Low Energy:> 0.80
-
-
0.80 -
-
-
- -61 -
dBm
- -46 -
1. Measured in conducted mode, based on reference design (see AN5165), using output power specific external RF filter and
impedance matching networks to interface with a 50 Ω antenna.
2. SVMFBPSSMPoSnaSnTdMV3D2DWmBuSstebrieessemt itcorodcifofenrteronltlevrosl,taagveaillaebvelelso,ndewpwewn.dsitn.cgoump)o.n the desired TX signal (see AN5246 Usage of
3. Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440
Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
DS11929 Rev 10
89/193
169

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