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2N7002 View Datasheet(PDF) - MAKO SEMICONDUCTOR CO.,LIMITED

Part Name
Description
Manufacturer
2N7002
MAKOSEMI
MAKO SEMICONDUCTOR CO.,LIMITED 
2N7002 Datasheet PDF : 4 Pages
1 2 3 4
Small Signal MOSFET Transistor
FEATURES
z High Density Cell Design For Low
RDS(ON)
z Voltage Controlled Small Switch.
z Rugged and Reliable.
z High Saturation Current Capability.
2N7002
APPLICATIONS
z N-channel enhancement mode effect transistor.
z Switching application.
ORDERING INFORMATION
Type No.
Marking
2N7002
7002/702/72*
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VDGR
VGSS
ID
PD
RθJA
Drain-Source voltage
Drain-Gate voltage(RGS1M)
Gate -Source voltage - continuous
-Non Repetitive (tp<50μs)
Maximum Drain current -continuous
-Pulsed
Power Dissipation
Thermal resistance,Junction-to-Ambient
60
60
±20
±40
115
800
180
600
Units
V
V
V
mA
mW
/W
TJ, Tstg
Junction and Storage Temperature
-50-150
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
www.makosemi.hk
MAKO Semiconductor Co., Limited
4008-378-873
1

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