2N7002 View Datasheet(PDF) - MAKO SEMICONDUCTOR CO.,LIMITED
Part Name
Description
Manufacturer
2N7002 Datasheet PDF : 4 Pages
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Small Signal MOSFET Transistor
2N7002
Parameter
Symbol Test conditions
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=10μA
Gate Threshold Voltage
Gate-body Leakage Forward
Reverse
VGS(th)
IGSS
VDS=VGS, ID=250μA
VDS=0V, VGS=20V
VDS=0V, VGS=-20V
Zero Gate Voltage Drain Current IDSS
VDS=60V, VGS=0V
VDS=60V,VGS=0V,Tj=125℃
MIN TYP MAX UNIT
60
V
1 2.1 2.5
100
nA
-100
1
μA
500
On-state Drain Current
ID(On)
VGS=10V, VDS≥2.0VDS(ON)
500 2700
mA
Drain-Source on-voltage
VDS(ON)
VGS=10V,ID=500mA
VGS=5V,ID=50mA
0.6 3.75
V
0.09 1.5
Forward transconductance
gFS
VDS≥2.0VDS(ON),ID=200mA
80 320
mS
Static drain-Source on-resistance
RDS(ON)
VGS=10V,ID=500mA
VGS=10V,ID=500mA,Tj=100℃
VGS=5.0V,ID=50mA
VGS=5.0V,ID=50mA, Tj=100℃
1.2 7.5
1.7 13.5
1.7 7.5
Ω
2.4 13.5
Drain-Source diode forward
voltage
VSD
VGS=0V,ID=115mA
0.88 1.5 V
Input capacitance
CISS
20 50
Output capacitance
COSS
VDS=25V,VGS=0V,f=1.0MHz
11 25 pF
Reverse transfer capacitance
Turn-On Delay Time
Turn-Off Delay Time
CRSS
tD(ON)
tD(OFF)
VDD = 30V, ID= 0.2A,
RL = 150Ω, VGS= 10V,
RGEN= 25Ω
4
5
20 ns
20 ns
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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MAKO Semiconductor Co., Limited
4008-378-873
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