STP80NF03L-04(1999) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP80NF03L-04
(Rev.:1999)

N-CHANNEL 30V - 0.0034 Ω - 80A TO-220 STripFET™ POWER MOSFET

STMicroelectronics 

®

STP80NF03L-04

N-CHANNEL 30V - 0.0034 Ω - 80A TO-220

STripFET™ POWER MOSFET

TYPE

VDSS

RDS(on)

STP80NF03L-04 30 V < 0.004 Ω

s TYPICAL RDS(on) = 0.0034 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s LOW GATE CHARGE 100 oC

s APPLICATION ORIENTED

CHARACTERIZATION

ID

80 A

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique ”Single Feature

Size™” strip-based process. The resulting

transistor shows extremely high packing density

for low on-resistance, rugged avalance

characteristics and less critical alignment steps

therefore a remarkable manufacturing

reproducibility.

PRELIMINARY DATA

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SOLENOID AND RELAY DRIVERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC & DC-AC CONVERTERS

s AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc. )

ABSOLUTE MAXIMUM RATINGS

S ymb ol

Parameter

VDS

VDGR

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

VG S

ID(••)

ID

I DM ( •)

Ptot

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

T otal Dissipation at Tc = 25 oC

Derating Factor

EAS (1) Single Pulse Avalanche Energy

Tstg Storage Temperature

Tj Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

(••) Current limited by package

November 1999

Va l u e

Unit

30

V

30

V

± 20

V

80

A

56

A

320

A

210

1.43

W

W /o C

2

J

-65 to 175

oC

175

oC

(1) starting Tj = 25 oC, ID =40A , VDD =15V

1/6

Share Link: