STP80NF03L-04(1999) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP80NF03L-04
(Rev.:1999)
(Rev.:1999)
STMicroelectronics
STP80NF03L-04 Datasheet PDF : 6 Pages
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STP80NF03L-04
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 15 V
ID = 40 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
VDD = 24 V ID = 80 A VGS = 4.5 V
Min.
Typ.
50
275
120
37
58
Max.
160
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 15 V
ID = 40 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
Vclamp = 24 V
ID = 80 A
RG = 4.7 Ω
VGS = 4.5 V
(Induct ive Load, see fig. 5)
Min.
Typ.
230
190
175
280
470
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
ISDM (•)
VSD (∗)
trr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 80 A VGS = 0
ISD = 80 A
VDD = 20 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
Min.
Typ.
Max.
80
320
1.5
88
0.176
4.4
Unit
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
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