STP7NB60KD View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP7NB60KD

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK PowerMESH™ IGBT

STMicroelectronics 

STGP7NB60KD STGB7NB60KD

STGP7NB60KDFP

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK

PowerMESH™ IGBT

TYPE

VCES

VCE(sat)

IC

ADVANCED DATA

STGP7NB60KD

600 V < 2.8 V

7A

STGP7NB60KDFP 600 V < 2.8 V

7A

STGB7NB60KD

600 V < 2.8 V

7A

s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

s LOW ON-VOLTAGE DROP (Vcesat)

s LOW GATE CHARGE

s HIGH CURRENT CAPABILITY

s OFF LOSSES INCLUDE TAIL CURRENT

s VERY HIGH FREQUENCY OPERATION

s SHORT CIRCUIT RATED

s CO-PACKAGED WITH TURBOSWITCH™

ANTIPARALLEL DIODE

3

2

1

TO-220

3

2

1

TO-220FP

3

1

D2PAK

DESCRIPTION

Using the latest high voltage technology based on a

patented strip layout, STMicroelectronics has de-

signed an advanced family of IGBTs, the Power-

MESH™ IGBTs, with outstanding performances.

The suffix “K” identifies a family optimized for high

frequency motor control applications with short cir-

cuit withstand capability.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH FREQUENCY MOTOR CONTROLS

s SMPS AND PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCES

VECR

Collector-Emitter Voltage (VGS = 0)

Emitter-Collector Voltage

VGE Gate-Emitter Voltage

IC

Collector Current (continuos) at TC = 25°C

IC

Collector Current (continuos) at TC = 125°C

ICM (n) Collector Current (pulsed)

PTOT Total Dissipation at TC = 25°C

Derating Factor

VISO Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(n) Pulse width limited by safe operating area

June 2002

Value

Unit

STGP7NB60KD

STGB7NB60KD

STGP7NB60KDFP

600

V

20

V

±20

V

14

A

7

A

56

A

80

35

W

0.64

0.28

W/°C

--

2500

V

–65 to 150

°C

150

°C

1/9

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