STP7NB60KD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP7NB60KD Datasheet PDF : 9 Pages
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STGP7NB60KD/FP/STGB7NB60KD
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-h
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
TO-220
D2PAK
1.56
TO-220FP
3.57
62.5
0.5
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
VBR(CES) Collector-Emitter Breakdown IC = 250 µA, VGE = 0
600
Voltage
ICES
Collector cut-off
VCE = Max Rating, TC = 25 °C
50
(VGE = 0)
VCE = Max Rating, TC = 125 °C
500
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100
°C/W
°C/W
°C/W
Unit
V
µA
µA
nA
ON (1)
Symbol
VGE(th)
VCE(sat)
Parameter
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
VCE = VGE, IC = 250µA
VGE = 15V, IC = 7 A
VGE = 15V, IC = 7 A, Tc =100°C
Min.
5
Typ.
2.3
1.9
Max.
7
2.8
Unit
V
V
V
DYNAMIC
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
tscw
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Short Circuit Withstand Time
Test Conditions
VCE = 25 V , IC =7 A
VCE = 25V, f = 1 MHz, VGE = 0
VCE = 480V, IC = 7 A,
VGE = 15V
Vce = 0.5 VBR(CES),
VGE = 15 V,
Tj = 125°C , RG = 10 Ω
Min.
10
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
(di/dt)on Turn-on Current Slope
Eon
Turn-on Switching Losses
Test Conditions
VCC = 480 V, IC = 7 A
RG = 10Ω, VGE = 15 V
VCC= 480 V, IC = 7 A RG=10Ω
VGE = 15 V,Tj = 125°C
Min.
Typ.
5
560
68
15
42
7.9
17.6
Typ.
15
48
160
70
Max.
Max.
Unit
S
pF
pF
pF
nC
nC
nC
µs
Unit
ns
ns
A/µs
µJ
2/9
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