M29W008B-100N6TR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
M29W008B-100N6TR
STMicroelectronics
M29W008B-100N6TR Datasheet PDF : 30 Pages
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M29W008T, M29W008B
Table 14A. Read AC Characteristics
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W008T / M29W008B
Symbol Alt
Parameter
Test
Condition
-90
VCC = 3.0V to 3.6V
CL = 30pF
Min
Max
-100
VCC = 2.7V to 3.6V
CL = 30pF
Min
Max
Unit
tAVAV
tRC Address Valid to Next Address Valid
E = VIL,
G = VIL
90
100
ns
tAVQV tACC Address Valid to Output Valid
E = VIL,
G = VIL
90
100
ns
tELQX (1)
tLZ
Chip Enable Low to Output
Transition
G = VIL
0
0
ns
tELQV (2) tCE Chip Enable Low to Output Valid
G = VIL
90
100
ns
tGLQX (1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
0
0
ns
tGLQV (2) tOE Output Enable Low to Output Valid
E = VIL
35
40
ns
tEHQX
tOH
Chip Enable High to Output
Transition
G = VIL
0
0
ns
tEHQZ (1) tHZ Chip Enable High to Output Hi-Z
G = VIL
30
30
ns
tGHQX
tOH
Output Enable High to Output
Transition
E = VIL
0
0
ns
tGHQZ (1) tDF Output Enable High to Output Hi-Z
E = VIL
30
30
ns
tAXQX
tOH
Address Transition to Output
Transition
E = VIL,
G = VIL
0
0
ns
tPLYH (1,3)
tRRB
tREADY
RP Low to Read Mode
10
10
µs
tPHEL tRH RP High to Chip Enable Low
50
50
ns
tPLPX
tRP RP Pulse Width
500
500
ns
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase, Erase Suspend or Program mode.
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