M29W008B-100N6TR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
M29W008B-100N6TR
STMicroelectronics
M29W008B-100N6TR Datasheet PDF : 30 Pages
| |||
M29W008T, M29W008B
Table 14B. Read AC Characteristics
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
Symbol Alt
Parameter
M29W008T / M29W008B
Test
Condition
-120
-150
Unit
VCC = 2.7V to 3.6V VCC = 2.7V to 3.6V
Min
Max
Min
Max
tAVAV
tRC Address Valid to Next Address Valid
E = VIL,
G = VIL
120
150
ns
tAVQV tACC Address Valid to Output Valid
E = VIL,
G = VIL
120
150
ns
tELQX (1)
tLZ
Chip Enable Low to Output
Transition
G = VIL
0
0
ns
tELQV (2) tCE Chip Enable Low to Output Valid
G = VIL
120
150
ns
tGLQX (1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
0
0
ns
tGLQV (2) tOE Output Enable Low to Output Valid
E = VIL
50
55
ns
tEHQX
tOH
Chip Enable High to Output
Transition
G = VIL
0
0
ns
tEHQZ (1) tHZ Chip Enable High to Output Hi-Z
G = VIL
30
40
ns
tGHQX
tOH
Output Enable High to Output
Transition
E = VIL
0
0
ns
tGHQZ (1) tDF Output Enable High to Output Hi-Z
E = VIL
30
40
ns
tAXQX
tOH
Address Transition to Output
Transition
E = VIL,
G = VIL
0
0
ns
tPLYH (1,3)
tRRB
tREADY
RP Low to Read Mode
10
10
µs
tPHEL tRH RP High to Chip Enable Low
50
50
ns
tPLPX
tRP RP Pulse Width
500
500
ns
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase, Erase Suspend or Program mode.
16/30
Share Link: 