STM32F103V8H6TR Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción

Fabricante

STM32F103V8H6TR

Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 com. interfaces

STMicroelectronics 

STM32F103xC, STM32F103xD, STM32F103xE

Electrical characteristics

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

Table 42. EMI characteristics

Symbol Parameter

Conditions

Monitored

frequency band

Max vs. [fHSE/fHCLK]

8/48 MHz 8/72 MHz

Unit

0.1 to 30 MHz

8

SEMI

Peak level

VDD 3.3 V, TA 25 °C,

LQFP144 package

compliant with IEC

30 to 130 MHz

130 MHz to 1GHz

31

28

61967-2

SAE EMI Level

4

12

21 dBµV

33

4

-

5.3.12

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114/C101 standard.

Table 43. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class Maximum value(1) Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA +25 °C, conforming

to JESD22-A114

2

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA +25 °C, conforming

to JESD22-C101

II

2000

V

500

1. Based on characterization results, not tested in production.

Doc ID 14611 Rev 7

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