LH28F800BGE-BL12 データシートの表示（PDF） - Sharp Electronics

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LH28F800BGE-BL12

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

Sharp Electronics 

LH28F800BG-L/BGH-L (FOR TSOP, CSP)

6.2.8 BLOCK ERASE AND WORD WRITE PERFORMANCE (contd.) (NOTE 3, 4)

• VCC = 5.0 V±0.25 V, 5.0±0.5 V, TA = 0 to +70˚C or –40 to +85˚C

SYMBOL

PARAMETER

VPP = 5.0±0.5 V

VPP = 12.0±0.6 V

NOTE MIN. TYP.(NOTE 1) MAX. MIN. TYP.(NOTE 1) MAX. UNIT

tWHQV1

32 k-Word Block

2

12.2

Word Write Time

tEHQV1

4 k-Word Block

2

18.3

8.4

µs

17

µs

32 k-Word Block

2

0.4

Block Write Time

4 k-Word Block

2

0.08

0.28

s

0.07

s

tWHQV2

32 k-Word Block

2

0.46

Block Erase Time

tEHQV2

4 k-Word Block

2

0.26

0.39

s

0.25

s

tWHRH1

Word Write Suspend Latency Time to Read

tEHRH1

5

6

4

5 µs

tWHRH2

Erase Suspend Latency Time to Read

tEHRH2

9.6 12

9.6 12 µs

NOTES :

1. Typical values measured at TA = +25˚C and nominal

voltages. Subject to change based on device

characterization.

2. Excludes system-level overhead.

3. These performance numbers are valid for all speed

versions.

4. Sampled, not 100% tested.

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