STM32F205VE 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F205VE

ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera

STMicroelectronics 

Electrical characteristics

STM32F20xxx

Table 12. General operating conditions (continued)

Symbol

Parameter

Conditions

Min Max Unit

VCAP1

VCAP2

PD

TA

TJ

Internal core voltage to be supplied

externally in REGOFF mode

Power dissipation at TA = 85 °C for

suffix 6 or TA = 105 °C for suffix 7(4)

Ambient temperature for 6 suffix

version

Ambient temperature for 7 suffix

version

Junction temperature range

LQFP64

WLCSP66

LQFP100

LQFP144

LQFP176

UFBGA176

Maximum power dissipation

Low power dissipation(5)

Maximum power dissipation

Low power dissipation(5)

6 suffix version

7 suffix version

1.1 1.3

V

-

444

-

392

-

434

mW

-

500

-

526

-

513

–40 85

°C

–40 105

–40 105

°C

–40 125

–40 105

°C

–40 125

1. IRROFF is set to VDD, this value can be lowered to 1.7 V when the device operates in the 0 to 70 °C temperature range.

a reduced temperature range.

2. When the ADC is used, refer to Table 64: ADC characteristics.

3. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and

VDDA can be tolerated during power-up and power-down operation.

4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.

5. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax.

Table 13. Limitations depending on the operating power supply range

Operating

power

supply

range

ADC

operation

Maximum

Flash

memory

access

frequency

(fFlashmax)

Number of wait

states at

maximum CPU

frequency

(fCPUmax=

120 MHz)(1)

I/O operation

FSMC_CLK

frequency for

synchronous

accesses

Possible

Flash

memory

operations

VDD =1.8 to

2.1 V(2)

Conversion

time up to

1 Msps

16 MHz with

no Flash

memory wait

state

– Degraded

speed

8-bit erase

7(3)

performance

up to 30 MHz

and program

operations

– No I/O

only

compensation

VDD = 2.1 to

2.4 V

Conversion

time up to

1 Msps

18 MHz with

no Flash

memory wait

state

– Degraded

speed

16-bit erase

6(3)

performance up to 30 MHz and program

– No I/O

operations

compensation

64/177

Doc ID 15818 Rev 9

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