STM32F217RGT7 데이터 시트보기 (PDF) - STMicroelectronics
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STM32F217RGT7 Datasheet PDF : 173 Pages
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STM32F21xxx
Electrical characteristics
5.3.13
Table 36. Flash memory programming with VPP (continued)
Symbol
Parameter
Conditions
Min(1) Typ Max(1) Unit
VPP
VPP voltage range
7
-
IPP
Minimum current sunk on
the VPP pin
10
-
tVPP(3)
Cumulative time during
which VPP is applied
-
-
1. Guaranteed by design, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
3. VPP should only be connected during programming/erasing.
9
V
-
mA
1 hour
Table 37. Flash memory endurance and data retention
Symbol Parameter
Conditions
NEND
tRET
Endurance
Data retention
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
1 kcycle(2) at TA = 85 °C
1 kcycle(2) at TA = 105 °C
10 kcycles(2) at TA = 55 °C
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
Value
Min(1)
10
30
10
20
Unit
kcycles
Years
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
● Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
● FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 38. They are based on the EMS levels and classes
defined in application note AN1709.
Doc ID 17050 Rev 8
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