LH28F160S5T-L80 查看數據表（PDF） - Sharp Electronics

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LH28F160S5T-L80

16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)

Sharp Electronics 

LH28F160S5-L/S5H-L

6.2.3 DC CHARACTERISTICS (contd.)

SYMBOL

PARAMETER

VIL Input Low Voltage

VIH Input High Voltage

NOTE

7

7

VOL Output Low Voltage

3, 7

Output High Voltage

VOH1

3, 7

(TTL)

Output High Voltage

VOH2

3, 7

(CMOS)

VPP Lockout Voltage during

VPPLK

4, 7

Normal Operations

VPP Voltage during Write or Erase

VPPH1

Operations

VLKO VCC Lockout Voltage

VCC = 5.0±0.5 V

MIN.

MAX.

– 0.5

0.8

VCC

2.0

+0.5

0.45

2.4

0.85

VCC

VCC

– 0.4

UNIT

V

TEST

CONDITIONS

V

VCC = VCC Min.

V

IOL = 5.8 mA

VCC = VCC Min.

V

IOH = –2.5 mA

VCC = VCC Min.

V

IOH = –2.5 mA

VCC = VCC Min.

V

IOH = –100 µA

1.5

V

4.5

5.5

V

2.0

V

NOTES :

1. All currents are in RMS unless otherwise noted. Typical

values at nominal VCC voltage and TA = +25°C. These

currents are valid for all product versions (packages and

speeds).

2. ICCWS and ICCES are specified with the device de-

selected. If reading or (multi) word/byte writing in erase

suspend mode, the device’s current draw is the sum of

ICCWS or ICCES and ICCR or ICCW, respectively.

3. Includes STS.

4. Block erases, full chip erases, (multi) word/byte writes

and block lock-bit configurations are inhibited when VPP

≤ VPPLK, and not guaranteed in the range between

VPPLK (max.) and VPPH1 (min.) and above VPPH1 (max.).

5. Automatic Power Saving (APS) reduces typical ICCR to

1 mA at 5 V VCC in static operation.

6. CMOS inputs are either VCC±0.2 V or GND±0.2 V. TTL

inputs are either VIL or VIH.

7. Sampled, not 100% tested.

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