DD28F032SA 查看數據表（PDF） - Intel
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DD28F032SA Datasheet PDF : 49 Pages
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E
DD28F032SA
6.8 AC Characteristics for WE#—Controlled Command Write Operations(1)
(Continued)
VCC = 5.0V ± 0.5V, 5.0V ± 0.25V, TA = 0°C to +70°C
Versions
VCC ± 5% DD28F032SA-070
Unit
VCC ± 10%
DD28F032SA-080 DD28F032SA-100
Sym Parameter
Notes Min Typ Max Min Typ Max Min Typ Max
tRHPL
RP# Hold
from Valid
3
0
0
0
ns
Status
Register
(CSR, GSR,
BSR) Data
and RY/BY#
High
tPHWL
RP# High
Recovery to
1
1
1
µs
WE# Going
Low
tWHGL
Write
Recovery
60
65
65
ns
before Read
tQVVL
VPP Hold from
Valid Status
0
0
0
µs
Register
(CSR, GSR,
BSR) Data
and RY/BY#
High
tWHQV1
Duration of
Word/Byte
Program
4,5
4.5 6 Note 4.5 6 Note 4.5 6 Note µs
7
7
7
Operation
tWHQV2
Duration of
Block Erase
4
0.3
10 0.3
10 0.3
10 sec
Operation
NOTES:
For 28F016SA No. 1: CEX# is defined as the latter of CE0# or CE1# going low or the first of CE0# or CE1# going high.
For 28F016SA No. 2: CEX# is defined as the latter of CE0# or CE2# going low or the first of CE0# or CE2# going high.
1. Read timings during data program and block erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested
4. Data program/block erase durations are measured to valid Status Register data.
5. Word/byte program operations are typically performed with 1 programming pulse.
6. Address and data are latched on the rising edge of WE# for all command write operations.
7. This information will be available in a technical paper. Please call Intel’s Applications Hotline or your local sales office for
more information.
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