ST7PSCR1E4M1/XXX 查看數據表（PDF） - STMicroelectronics
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ST7PSCR1E4M1/XXX
STMicroelectronics
ST7PSCR1E4M1/XXX Datasheet PDF : 102 Pages
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ST7SCR
14.5 MEMORY CHARACTERISTICS
Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified.
14.5.1 RAM and Hardware Registers
Symbol
Parameter
VRM
Data retention mode 1)
Conditions
Min
Typ
Max
HALT mode (or RESET)
2
14.5.2 FLASH Memory
Operating Conditions: fCPU = 8 MHz.
DUAL VOLTAGE FLASH MEMORY
Symbol
Parameter
fCPU Operating Frequency
VPP
IPP
tPROG
tERASE
tVPP
tRET
NRW
Programming Voltage
VPP Current
Byte Programming Time
Sector Erasing Time
Device Erasing Time
Internal VPP Stabilization Time
Data Retention
Write Erase Cycles
Conditions
Read mode
Write / Erase mode,
TA=25°C
4.0V <= VDD <= 5.5V
Write / Erase
TA=25°C
TA ≤ 55°C
TA=25°C
Min
Typ
Max
8
8
11.4
12.6
30
100
500
2
10
5
10
10
20
100
Warning: Do not connect 12V to VPP before VDD is powered on, as this may damage the device.
Unit
V
Unit
MHz
V
mA
µs
sec
µs
years
cycles
14.6 SMARTCARD SUPPLY SUPERVISOR ELECTRICAL CHARACTERISTICS
(TA = 0... +70oC, 4.0 < VDD - VSS < 5.5V unless otherwise specified)
SMARTCARD SUPPLY SUPERVISOR
Symbol
Parameter
5V regulator output (for IEC7816-3 Class A Cards)
VCARD
ISC
IOVDET
tIDET
tOFF
SmartCard Power Supply Voltage
SmartCard Supply Current
Current Overload Detection
Detection time on Current Overload
VCARD Turn off Time (see Figure 35 on
page 61)
tON
VCARD Turn on Time (see Figure 35 on
page 61)
IVDD
VDD supply current
3V regulator output (for IEC7816-3 Class B Cards)
VCARD
ISC
IOVDET
tIDET
tOFF
SmartCard Power Supply Voltage
SmartCard Supply Current
Current Overload Detection
Detection time on Current Overload
VCARD Turn off Time (see Figure 35 on
page 61)
Conditions
CLOADmax ≤ 4.7uF
CLOADmax ≤ 4.7uF
See note
CLOADmax≤4.7uF
Min
Typ
Max
Unit
4.6
5.00
5.4
V
170 1)
55
mA
120 1)
mA
1400 1)
µs
750
µs
150
500
µs
100
mA
2.7
170 1)
3.3
V
50
mA
100 1)
mA
1400 1)
us
750
us
82/102
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