ST7PSCR1E4M1/XXX 查看數據表（PDF） - STMicroelectronics

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ST7PSCR1E4M1/XXX

8-BIT LOW-POWER, FULL-SPEED USB MCU WITH 16K FLASH, 768 RAM, SMARTCARD I/F, TIMER

STMicroelectronics 

ST7SCR

14.7 EMC CHARACTERISTICS

Susceptibility tests are performed on a sample ba-

sis during product characterization.

14.7.1 Functional EMS

(Electro Magnetic Susceptibility)

Based on a simple running application on the

product (toggling 2 LEDs through I/O ports), the

product is stressed by two electro magnetic events

until a failure occurs (indicated by the LEDs).

s ESD: Electro-Static Discharge (positive and

negative) is applied on all pins of the device until

a functional disturbance occurs. This test

conforms with the IEC 1000-4-2 standard.

s FTB: A Burst of Fast Transient voltage (positive

and negative) is applied to VDD and VSS through

a 100pF capacitor, until a functional disturbance

occurs. This test conforms with the IEC 1000-4-

4 standard.

A device reset allows normal operations to be re-

sumed.

Symbol

VFESD

VFFTB

Parameter

Conditions

Voltage limits to be applied on any I/O pin VDD=5V, TA=+25°C, fOSC=8MHz

to induce a functional disturbance

conforms to IEC 1000-4-2

Fast transient voltage burst limits to be ap-

plied through 100pF on VDD and VDD pins

to induce a functional disturbance

VDD=5V, TA=+25°C, fOSC=8MHz

conforms to IEC 1000-4-4

Neg 1) Pos 1)

1

0.7

2

2

Unit

kV

Notes:

1. Data based on characterization results, not tested in production.

84/102

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