STM32F030CC(2015) 查看數據表（PDF） - STMicroelectronics

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STM32F030CC
(Rev.:2015)

Value-line ARM®-based 32-bit MCU with up to 256-KB Flash, timers, ADC, communication interfaces, 2.4-3.6 V operation

STMicroelectronics 

Electrical characteristics

STM32F030x4/6/8/C

6.3.12

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114/C101 standard.

Table 43. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Packages

Class

Maximum

value(1)

Unit

VESD(HBM)

Electrostatic discharge voltage

(human body model)

TA = +25 °C, conforming

to JESD22-A114

All

VESD(CDM)

Electrostatic discharge voltage

(charge device model)

TA = +25 °C, conforming

to ANSI/ESD STM5.3.1

All

2

2000

V

II

500

V

1. Data based on characterization results, not tested in production.

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up

performance:

• A supply overvoltage is applied to each power supply pin.

• A current injection is applied to each input, output and configurable I/O pin.

These tests are compliant with EIA/JESD 78A IC latch-up standard.

Table 44. Electrical sensitivities

Symbol

Parameter

Conditions

LU Static latch-up class TA = +105 °C conforming to JESD78A

Class

II level A

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