STM32F030CC(2015) 查看數據表（PDF） - STMicroelectronics

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STM32F030CC
(Rev.:2015)

Value-line ARM®-based 32-bit MCU with up to 256-KB Flash, timers, ADC, communication interfaces, 2.4-3.6 V operation

STMicroelectronics 

Electrical characteristics

STM32F030x4/6/8/C

Symbol

Parameter

VIL

Low level input

voltage

VIH

High level input

voltage

Vhys

Schmitt trigger

hysteresis

Ilkg

Input leakage

current(2)

Weak pull-up

RPU equivalent resistor

(4)

Table 46. I/O static characteristics

Conditions

Min

Typ

Max

Unit

TC and TTa I/O

FT and FTf I/O

BOOT0

All I/Os except

BOOT0 pin

TC and TTa I/O

FT and FTf I/O

BOOT0

All I/Os except

BOOT0 pin

TC and TTa I/O

FT and FTf I/O

BOOT0

-

-

0.3 VDDIOx+0.07(1)

-

- 0.475 VDDIOx–0.2(1)

-

-

0.3 VDDIOx–0.3(1)

V

-

-

0.445 VDDIOx+0.398(1) -

0.5 VDDIOx+0.2(1)

-

0.2 VDDIOx+0.95(1)

-

0.3 VDDIOx

-

-

-

V

0.7 VDDIOx

-

-

-

200(1)

-

-

100(1)

-

mV

-

300(1)

-

TC, FT and FTf I/O

TTa in digital mode

-

VSS ≤ VIN ≤ VDDIOx

TTa in digital mode

VDDIOx ≤ VIN ≤ VDDA

-

TTa in analog mode

VSS ≤ VIN ≤ VDDA

-

FT and FTf I/O (3)

VDDIOx ≤ VIN ≤ 5 V

-

-

± 0.1

-

1

μA

-

± 0.2

-

10

VIN = VSS

25

40

55

kΩ

Weak pull-down

RPD equivalent

resistor(4)

VIN = VDDIOx

25

40

55

kΩ

CIO I/O pin capacitance

-

5

-

pF

1. Data based on design simulation only. Not tested in production.

2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 45:

I/O current injection susceptibility.

3. To sustain a voltage higher than VDDIOx + 0.3 V, the internal pull-up/pull-down resistors must be disabled.

4. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

PMOS/NMOS contribution to the series resistance is minimal (~10% order).

66/96

DocID024849 Rev 2

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