STPS10L45CR 查看數據表（PDF） - STMicroelectronics
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STPS10L45CR Datasheet PDF : 10 Pages
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Characteristics
1
Characteristics
STPS10L45C
Table 1. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
45
IF(RMS) RMS forward voltage
20
TO-220AB /
Tc =135° C Per diode
5
IF(AV)
Average forward
current
D2PAK / I2PAK
TO-220FPAB
δ = 0.5
Per device
Tc = 140° C Per diode
δ = 0.5
Per device
10
5
10
IFSM
IRRM
IRSM
PARM
Tstg
Tj
dV/dt
Surge non repetitive forward current tp = 10 ms sinusoidal
150
Repetitive peak reverse current
tp = 2 µs square F = 1 kHz
1
Non repetitive peak reverse current tp = 100 µs square
2
Repetitive peak avalanche power tp = 1 µs Tj = 25°C
2700
Storage temperature range
-65 to + 150
Maximum operating junction temperature (1)
150
Critical rate of rise of reverse voltage
10000
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j--–-----a----)
condition
to
avoid
thermal
runaway
for
a
diode
on
its
own
heatsink
Table 2. Thermal resistances
Symbol
Parameter
Value
Rth(j-c)
Rth (c)
Junction to case
Rth(j-c)
Rth (c)
Junction to case
TO-220AB / D2PAK /
I2PAK
Per diode
Total
3
1.7
Coupling
0.35
TO-220FPAB
Per diode
5
Total
3.8
Coupling
2.5
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Unit
V
A
A
A
A
A
A
W
°C
°C
V/µs
Unit
°C/W
°C/W
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
Test Conditions
IR(1) Reverse leakage current
VF(1) Forward voltage drop
1. Pulse test: tp = 380 µs, δ < 2%
Tj = 25° C
Tj = 100° C
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
VR = VRRM
IF = 5 A
IF = 5 A
IF = 10 A
IF = 10 A
To evaluate the conduction losses use the following equation:
P = 0.33 x IF(AV) + 0.026 IF2(RMS)
Min. Typ. Max. Unit
0.15 mA
45 90 mA
0.53
0.36 0.46
V
0.67
0.49 0.59
2/10
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